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PD-97022
Ultra Low Dropout Positive Fixed Linear Regulator
Product Summary
Part Number
IRUH33P183A1M
IRUH33P183A1M
+3.3Vin to 1.8Vout at 3.0A
Dropout
1.1V
IO
3.0A
Vin
3.3V
Vout
1.8V
8-LEAD FLAT PACK
Features:
The IRUH33P183A1M is a space qualified, ultra low dropout linear regulator designed specifically for space applications. This product has been characterized to a total ionizing dose of 1.0 Mrad(Si) per MIL-STD-883, Method 1019 at both high and low dose rates under biased and unbiased conditions to account for ELDRS effects in bipolar devices. The ultra low dropout voltage of 1.1V @ 3A makes the part particularly useful for applications requiring low noise and higher efficiency.
n
n
n n n n n n
Total dose to 1.0 Mrad(Si) and low dose capability to 500 Krad(Si) allows use in space applications Single Event latchup Immune LET = 84 MeV/(mg/cm2) Fluency = 1 x 109 Ions/cm2 Low noise, higher efficiency Ultra low dropout voltage of 1.1V@ 3A out significantly reduces power consumption Remote shutdown permits power sequencing to be easily implemented Hermetic 8-Lead Flat Pack ensures higher reliability Space Level Screened This part is also available in MO-078 Package as IRUH33P183B1M
Absolute Maximum Ratings
Parameter
Output Current Input Voltage Power Dissipation, TC = 25C Thermal Resistance, Junction to Case Operating Temperature Range Storage Temperature Range Lead Temperature
Symbol
IO VIN PTOT RTHJC TJ TS TL
Value
3.5 7.0 19 6.5 -55 to +125 -65 to +150 300
Units
A V W C/W C
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11/14/05
IRUH33P183A1M
Pre-Radiation
Electrical Characteristics @TC = 25C (Unless Otherwise Specified)
Parameter Test Conditions
VIN = 3.3V, IO = 1.5A VIN = 2.97V, IO = 50mA Output Voltage VIN = 2.97V, IO = 3.0A VIN = 3.63V, IO = 50mA VIN = 3.63V, IO = 3.0A Input Voltage Range - Operating IO = 3.0A IO = 3.0A, VOUT = 2.5V Dropout Voltage Current Limit Ripple Rejection Shutdown Source Current Shutdown Pin Threshold VIN = 5.0V, Overcurrent Latchup F = 120Hz, IO = 50mA VIN VDROP ILATCH ISHDN VSHDN VOUT
Symbol
Min.
1.782 1.71 1.71 1.71 1.71 2.9 3.0 65 1.0 -0.1
Typ.
1.8 200 -
Max.
1.818 1.89 1.89 1.89 1.89 6.5 1.1 1.6 +0.1
Units
V
A dB A V
c
VSHDN = 5.0V VIN = 5.0V
Output Voltage at Shutdown
VIN = 3.3V, IO = 50mA, VSHDN = +5.0V VOUT (SHDN)
Pre-Radiation
Electrical Characteristics @TC = -55C to 125C (Unless Otherwise Specified)
Parameter Test Conditions
VIN = 3.3V, IO = 1.5A VIN = 2.97V, IO = 50mA Output Voltage VIN = 2.97V, IO = 3.0A VIN = 3.63V, IO = 50mA VIN = 3.63V, IO = 3.0A Input Voltage Range - Operating IO = 3.0A IO = 3.0A, VOUT = 2.5V Dropout Voltage Current Limit Ripple Rejection Shutdown Source Current Shutdown Pin Threshold VIN = 5.0V, Overcurrent Latchup F = 120Hz, IO = 50mA VIN VDROP ILATCH ISHDN VSHDN VOUT
Symbol
Min.
1.71 1.71 1.71 1.71 1.71 2.9 3.0 65 1.0 -0.1
Typ.
1.8 200 -
Max.
1.89 1.89 1.89 1.89 1.89 6.5 1.1 1.6 +0.1
Units
V
A dB A V
c
VSHDN = 5.0V VIN = 5.0V
Output Voltage at Shutdown
VIN = 3.3V, IO = 50mA, VSHDN = +5.0V VOUT (SHDN)
For notes, please refer to page 3
2
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IRUH33P183A1M
Post-Radiation
Electrical Characteristics @TC = 25C (Unless Otherwise Specified)
Parameter Test Conditions
VIN = 3.3V, IO = 1.5A VIN = 2.97V, IO = 50mA Output Voltage VIN = 2.97V, IO = 3.0A VIN = 3.63V, IO = 50mA VIN = 3.63V, IO = 3.0A Current Limit Ripple Rejection Output Voltage at Shutdown VIN = 3.3V F = 120Hz, IO = 50mA VIN = 5.0V, IO = 50mA, VSHDN = +5.0V VOUT (SHDN) IMAX VOUT
Symbol
Min.
1.71 1.71 1.71 1.71 1.71 3.0 40 -0.1
Typ.
1.8 -
Max.
1.89 1.89 1.89 1.89 1.89 +0.1
Units
V
A dB V
Notes for Electrical Characteristic Tables
VShutdown ramp from 0.8V to 4.8V, output monitored for a 100mV drop below the nominal specification for Vout
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IRUH33P183A1M
Pre-Radiation Characteristics
OMR9601 Ripple Rejection vs. Frequency 3A
120 100 80 (db) 60 40 20 0 100
1.5A .75A .50A
1,000
10,000 Frequency (Hz)
100,000
1,000,000
Fig 1. Ripple Rejection Vs Frequency
Radiation Performance Characteristics
Test
Total Ionizing Dose (Gamma)
Conditions
MIL-STD-883, Method 1019 Operating Bias applied during exposure Full Rated Load, Vin=3.3V
Min
1,000
Typ
Unit
Krads (Si)
Neutron Fluence Single Event effects SEU, SEL, SEGR, SEB
MIL-STD-883, Method 1017 Heavy Ions (LET) Operating Bias applied during exposure Full Rated Load, Vin=3.3 V
1.00E+09
1.00E+13
Neutrons/cm
2
84
MeV*cm /mg
2
4
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IRUH33P183A1M
Vin Vin 100uF 16V Tantalum
Vout Vout
IRUH33P183A1M
SHDN GND
1.0uFx10 Ceramic X 7R
1000uF 6.3V Low ESR Tantalum
Ground
Fig 2. Typical Application Circuit Input Capacitance
Recommended input capacitance for a generic application is a 100F, 16V tantalum capacitor. However, the input capacitance is not critical to the stability of the regulator and is therefore application dependant. In designs with a clean bus voltage that is situated close to the input of the regulator, only a small ceramic capacitor will be needed to decouple high frequency noise. On the other hand , in designs with a noisy bus, a larger capacitor will be needed. Care should be taken to ensure that the input to the regulator is sufficiently free of noise and disturbances.
Output Capacitance
Like most ultra low dropout voltage regulators, IRUH33P183A1M requires the use of output capacitors as part of the device frequency compensation. The device requires a minimum of 220F tantalum to ensure stability. Many different types of capacitor are available and have widely varying characteristics. These capacitors differ in capacitor tolerance, equivalent series resistance (ESR), equivalent series inductance and capacitance temperature coefficient. The IRUH33P183A1M frequency compensation optimizes frequency response with low ESR capacitors. In general, use capacitors with an ESR of less than 50m for heavy load applications. High quality bypass capacitors must be also be used to limit the high frequency noise generated by the load. Multiple small ceramic capacitors are typically required to limit parasitic inductance (ESL) and ESR in the capacitors to acceptable levels. The upper limit of the capacitance is governed by the delayed over-current latch function of the regulator. The regulator has a protection circuit that will latch the device off in the event of a short circuit. However, since it is known that the regulator will draw a large in-rush current upon startup, the latch-off is delayed by about 10ms to allow the outout capacitors to charge to a steady state without shutting down. During this period, the regulator will have an output current at its maximum of around 5A typical. Therefore, the maximum output capacitance can be as high as 20,000F without causing device to latch-off during start-up.
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IRUH33P183A1M
Vin
Drive
Vout
Shutdown
Gnd
Ground
Fig 3. Simplified Schematic Circuit
Space Level Screening Requirements
TEST/INSPECTION SCREENING LEVEL
SPACE Pre Seal Burn-In Nondestructive Bond Pull Internal Visual Temperature Cycle Constant Acceleration Mechanical Shock PIND Pre Burn-In-Electrical Burn-In Final Electrical Seal Radiographic External Visual Optional 100% 100% 100% 100% 100% 100% 100% 100% 100% 100% 100% 100% 1014 2012 2009 1015
MIL-STD-883
METHOD 1030 2023 2017 1010 2001 2002 2020
Note: International Rectifier doesnot currently have a DSCC certified Radiation Hardness Assurance Program
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IRUH33P183A1M
Case Outline and Dimensions - 8-Lead Flat Pack
Pin Assignment
Pin # 1 2 3 4 5 6 7 8 Pin Description GND GND SHUTDOWN N/C Vout Vout Vin Vin
Note: 1) All dimensions are in inches
Part Numbering Nomenclature
IR
Linear Regulator Module
U = Ultra Low Dropout Regulator
U
H
33
P
18
3
A
1M
P
Screening
P = Unscreened, 25C Electrical Test ( Not for Qual) K = Space Level Screening
Radiation Hardening
H = RAD Hardened or Tolerant
RAD Level
1M = 1M Rads
Input Voltage
33 = 3.3V
Polarity
P = Positive
Package Code
A = 8 Lead Flat Pack
Output Voltage
18 = 1.8V
Maximum Output Current
3 = 3 Amp
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 11/2005
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